Intelligent soft switching with AI support promises to reduce switching losses in power transistors by up to 95 per cent.
The 650V CoolMOS C6/E6 series of high-performance power MOSFETs combine the advantages of modern superjunction (SJ) devices with easy control of switching behaviour as well as high body diode ...
GOLETA, Calif.--(BUSINESS WIRE)--Transphorm, Inc. (Nasdaq: TGAN)—a pioneer in and global supplier of high reliability, high performance gallium nitride (GaN) power conversion products—announced today ...
Switching has almost always meant “hard" switching, which is simple but comes with all kinds of electrical and thermal ...
GaN Systems will demonstrate its 650-V, 150-A GaN power transistor at PCIM Europe, claiming the industry’s highest-current 650-V GaN power transistor. The GS-065-150 device delivers 100 times lower ...
Teledyne e2v HiRel announces the new TD99102 UltraCMOS® High-speed FET and GaN transistor driver offering very high switching speed of 20 MHz. The new flip-chip part is ideal for driving Teledyne ...
How many remote controls do you have in your home? Don’t you wish all these things were better integrated somehow, or that you could add remote control functionality to a random device? It’s a common ...
Mitsubishi Electric’s new 2.0kV LV100 semiconductor device is based on its insulated-gate bipolar transistor (IGBT) technology and Relaxed Field of Cathode (RFC) diodes. It is designed for industrial ...
The 2SA1648 is a PNP silicon epitaxial transistor featuring fast switching speed for high current control. It features low collector saturation voltage, as well as high DC current gain and excellent ...
A University at Buffalo team has proposed a new form of power MOSFET transistor that can handle incredibly high voltages with minimal thickness, heralding an efficiency increase in the power ...
Researchers have reported a black phosphorus transistor that can be used as an alternative ultra-low power switch. A research team developed a thickness-controlled black phosphorous tunnel ...