EDN

Gate drivers tackle 220-V GaN designs

Two half-bridge GaN gate drivers from ST integrate a bootstrap diode and linear regulators to generate high- and low-side 6-V gate signals. The STDRIVEG210 and STDRIVEG211 target systems powered from ...
eeworldonline

Integrated gate driver combines bootstrap diode and current limit resistor in 3×3 mm package

Littelfuse, Inc. has released the IXD0579M high-speed gate driver IC designed for driving N-channel MOSFETs or IGBTs in half-bridge configurations. The device operates across a 6.5 V to 18 V supply ...
Electronic Specifier

Littelfuse IXD0579M high-side and low-side gate driver

Designed to operate across a wide 6.5V to 18V supply range, the IXD0579M integrates a bootstrap diode and a series current limit resistor – components typically requiring discrete placement – into a ...
powerelectronicsworld

ST launches news GaN half-bridge drivers

Devices are fine-tuned for power conversion and motion control in consumer and industrial applications STMicroelectronics says its new high-voltage half-bridge gate drivers for GaN applications add ...
powerelectronicsnews

STMicroelectronics announces three-phase motor driver with integrated 500V power stage and a ready-to-use evaluation board

The integration of gate driver, power MOSFETs, bootstrap diodes, and fast-acting protection in one package saves 70% of board space. STMicroelectronics has launched the PWD5T60 three-phase driver, ...
Electronic Design

"Quiet" Three-Phase GaN IPM Has Very Low Dead Time

In this video, Texas Instruments’ Dung Dang explains the company’s DRV7308 three-phase intelligent power module (IPM). The IPM leverages a 205-mΩ, 650-V, e-mode gallium-nitride (GaN) device to drive ...
Electronic Design

Gate Drivers Keep Up with GaN’s Fast Switching Speed

Check out our coverage of APEC 2024. This article is part of the TechXchange: Gallium Nitride (GaN). The GaN FET is becoming widely preferred in power systems such as high-frequency DC-DC converters.
IEEE

A 600V HVIC with integrated bootstrap diode function by a new emulating HVMOS

Abstract: We propose a new high voltage MOS (HVMOS) structure and its gate control circuit for integrating a bootstrap diode (BSD) function into a 600V high voltage IC (HVIC). The new HVMOS structure ...
powerelectronicsworld

Infineon adds 160V MOTIX 3-phase gate driver IC

To further expand its offering for automotive and industrial motor control applications, Infineon has introduced the MOTIX 3-phase gate driver IC 6ED2742S01Q. The 160V silicon-on-insulator (SOI) gate ...
Electronic Products

EPC, Analog Devices partner on 2-MHz buck converter reference design

EPC’s EPC9160 buck converter reference design board delivers a 2-MHz switching frequency, leveraging EPC’s eGaN FET and ADI’s LTC7890 analog buck controller. EPC and Analog Devices, Inc. (ADI) have ...
Business Wire

Mitsubishi Electric to Launch Half-Bridge Driver High-Voltage (600V) IC With BSD Function

TOKYO--(BUSINESS WIRE)--Mitsubishi Electric Corporation (TOKYO: 6503) announced today the coming launch of a half-bridge driver high-voltage (600V) integrated circuit (HVIC) equipped with a built-in ...