Under forward-biased conditions and for increasing diode curren... | Filo
Under forward-biased conditions and for increasing diode curren... …
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(A) Calculate the small-signal diffusion capacitance and diffusion resistance of a silicon pn junction diode biased at ID Q=1.2  mA. Assume the minority carrier lifetimes are 0.5 μs in both the n and p regions. (b) Repeat part (a) for the case when the diode is biased at ID o=0.12  mA. | Numerade
(A) Calculate the small-signal diffusion capacitance and diffusio…
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